| PART |
Description |
Maker |
| MGTO1000 MGTO1200 |
GATE TURN OFF THYRISTORS
Gate turn-off thyristor / Repetitive peak off-state voltage 1000 V / 18 A RMS
|
MOTOROLA[Motorola, Inc]
|
| DG306AE25 |
Gate Turn-off Thyristor 353.25 A, 2500 V, GATE TURN-OFF SCR
|
Dynex Semiconductor, Ltd.
|
| DG758BX45 |
Gate Turn-off Thyristor
|
DYNEX[Dynex Semiconductor]
|
| 5SGA40L4501 |
Asymmetric Gate turn-off Thyristor
|
The ABB Group
|
| 5SGA30J4505 |
Asymmetric Gate turn-off Thyristor
|
The ABB Group
|
| 5SGA06D4502 |
Asymmetric Gate turn-off Thyristor
|
ABB[The ABB Group]
|
| GDM20830 |
Gate Turn-off (GTO) Thyristor Module
|
Powerex Power Semiconductors
|
| DGT409BCA6565 DGT409BCA |
Reverse Blocking Gate Turn-off Thyristor
|
DYNEX[Dynex Semiconductor]
|
| DGT305SE18 DGT305RE |
Reverse Blocking Gate Turn-off Thyristor
|
Dynex Semiconductor
|
| DGT408BRP DGT408BRP4540 |
Reverse Blocking Gate Turn-off Thyristor Target Information
|
DYNEX SEMICONDUCTOR LTD
DYNEX[Dynex Semiconductor]
|
| GCU15CA-130 |
MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FG1000BV-90DA FD2000BV-90DA |
Gate turn-off thyristor for high power inverter use press pack type
MITSUBISHI GATE TURN-OFF THYRISTORS HIGH POWER INVERTER USE PRESS PACK TYPE
|
Mitsubishi Electric Corporation
|
